PMN48XPAX Nexperia

PMN48XPA 20 V, P-channel Trench MOSFET 17 May 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C 1 - - -4.1 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2.4 A T = 25 C - 48 55 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMN48XPA 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D 1 D drain 2 D drain G 3 G gate 1 2 3 4 S source S TSOP6 (SOT457) 017aaa257 5 D drain 6 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN48XPA TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PMN48XPA BA PMN48XPA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 17 May 2019 2 / 14