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STL10N60M6 STMicroelectronics

STL10N60M6 electronic component of STMicroelectronics
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Part No.STL10N60M6
Manufacturer: STMicroelectronics
Category:MOSFET
Description: N-Channel Power MOSFET 600V 5.5A 8-Pin PowerFLAT T/R
Datasheet: STL10N60M6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.2592 ea
Line Total: USD 4.26

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 3000
Multiples : 1
3000 : USD 0.9829
6000 : USD 0.9482
9000 : USD 0.9194

0 - WHS 2


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 2.1705
47 : USD 0.9173
94 : USD 0.8666
188 : USD 0.8528
375 : USD 0.839

0 - WHS 3


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 4.2592
10 : USD 1.6036
100 : USD 1.2008
500 : USD 0.9863
1000 : USD 0.779
3000 : USD 0.7256

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STL10N60M6 Datasheet N-channel 600 V, 550 m typ., 5.5 A, MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package Features V R max. I P Order code DS DS(on) D TOT STL10N60M6 600 V 660 m 5.5 A 48 W 1 2 Reduced switching losses 3 4 Lower R per area vs previous generation DS(on) PowerFLAT 5x6 HV Low gate input resistance 100% avalanche tested D(5, 6, 7, 8) Zener-protected Applications Switching applications G(4) LLC converters Boost PFC converters Description S(1, 2, 3) The new MDmesh M6 technology incorporates the most recent advancements to AM15540v7 the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STL10N60M6 Product summary Order code STL10N60M6 Marking 10N60M6 Package PowerFLAT 5x6 HV Packing Tape and reel DS12876 - Rev 1 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STL10N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 5.5 case I A D Drain current (continuous) at T = 100 C 3.5 case (1) I Drain current (pulsed) 16 A DM P Total power dissipation at T = 25 C 48 W TOT case (2) I Avalanche current, repetitive or not repetitive 1.4 A AR (3) E Single pulse avalanche energy 120 mJ AS (4) dv/dt Peak diode recovery voltage slope 15 V/ns (5) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. Pulse width limited by T . jmax 3. Starting T = 25 C, I = I , V = 50 V. j D AR DD 4. I 5.5 A, di/dt = 400 A/s, V peak < V , V = 400 V SD DS (BR)DSS DD 5. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.6 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. DS12876 - Rev 1 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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