PD - 95449
IRL3803VSPbF
IRL3803VLPbF
HEXFET Power MOSFET
Logic-Level Gate Drive
D
Advanced Process Technology
V = 30V
DSS
Surface Mount (IRL3803VS)
Low-profile through-hole (IRL3803VL)
R = 5.5m
175C Operating Temperature
DS(on)
G
Fast Switching
Fully Avalanche Rated I = 140A
D
S
Lead-Free
Description
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
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The D Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
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D Pak TO-262
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possible on-resistance in any existing surface mount package. The D Pak
IRL3803VS IRL3803VL
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 140
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 110 A
D C GS
I Pulsed Drain Current 470
DM
P @T = 25C Power Dissipation 3.8 W
D A
P @T = 25C Power Dissipation 200 W
D C
Linear Derating Factor 1.4 W/C
V Gate-to-Source Voltage 16 V
GS
I Avalanche Current 71 A
AR
E Repetitive Avalanche Energy 20 mJ
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
STG
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 0.75
JC
C/W
R Junction-to-Ambient (PCB Mounted, steady state) 40
JA
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Electrical Characteristics @ T = 25C (unless otherwise specified)
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Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient 0.028 V/C Reference to 25C, I = 1mA
(BR)DSS J
D
5.5 V = 10V, I = 71A
GS D
m
R Static Drain-to-Source On-Resistance
DS(on)
7.5 V = 4.5V, I = 59A
GS D
V Gate Threshold Voltage 1.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 82 S V = 25V, I = 71A
fs DS D
25 V = 30V, V = 0V
DS GS
A
I Drain-to-Source Leakage Current
DSS
250 V = 24V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 16V
GS
nA
Gate-to-Source Reverse Leakage -100 V = -16V
GS
Q Total Gate Charge 76 I = 71A
g D
Q Gate-to-Source Charge 19 nC V = 24V
gs DS
Q Gate-to-Drain Mille) Charge 35 V = 4.5V, See Fig. 6 and 13
gd GS
t Turn-On Delay Time 16 V = 15V
d(on) DD
t Rise Time 180 I = 71A
r D
t Turn-Off Delay Time 29 R = 1.3
d(off) G
t Fall Time 37 V = 4.5V, See Fig. 10
f GS
D
Between lead,
L Internal Drain Inductance 4.5
D
6mm (0.25in.)
G
from package
L Internal Source Inductance 7.5
S
and center of die contact
S
C Input Capacitance 3720 V = 0V
iss GS
C Output Capacitance 1480 V = 25V
oss DS
C Reverse Transfer Capacitance 270 pF = 1.0MHz, See Fig. 5
rss
E Single Pulse Avalanche Energy 1560400 mJ I = 71A, L = 0.16mH
AS AS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
140
(Body Diode) showing the
G
I Pulsed Source Current integral reverse
SM
470
S
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.2 V T = 25C, I = 71A, V = 0V
SD J S GS
t Reverse Recovery Time 52 78 ns T = 25C, I = 71A
rr J F
Q Reverse Recovery Charge 91 140 nC di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Repetitive rating; pulse width limited by
This is a calculated value limited to T = 175C .
J
max. junction temperature. (See fig. 11)
Calculated continuous current based on maximum allowable
Starting T = 25C, L = 160H
J
junction temperature. Package limitation current is 75A.
R = 25, I = 71A, V =10V (See Figure 12)
G AS GS
Uses IRL3803 data and test conditions.
I 71Adi/d 110A/s, V V ,
SD DD (BR)DSS
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T 175C This is applied to D Pak, when mounted on 1" square PCB
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(FR-4 or G-10 Material ). For recommended footprint and
Pulse width 400s; duty cycle 2%.
soldering techniques refer to application note #AN-994.
This is a typical value at device destruction and
represents operation outside rated limits.
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