10 11 STL11N65M2 Datasheet N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package Features 6 7 5 V R max. I P Order code DS DS(on) D TOT STL11N65M2 650 V 0.75 5 A 46 W 4 Extremely low gate charge Excellent output capacitance (C ) profile OSS 1 12 100% avalanche tested PowerFLAT 5x5 HV Zener-protected Applications G S S S Switching applications D(5, 6, 11, 12) 10 9 8 7 D 11 6 D Description G(10) D 12 5 D This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device 1 2 3 4 exhibits low on-resistance and optimized switching characteristics, rendering it S(2, 3, 4, 7, 8, 9) NC S S S suitable for the most demanding high efficiency converters. Pin 1 Top View identification GIPG260120150916ALS Product status link STL11N65M2 Product summary Order code STL11N65M2 Marking 11N65M2 Package PowerFLAT 5x5 HV Packing Tape and reel DS13073 - Rev 1 - July 2019 www.st.com For further information contact your local STMicroelectronics sales office.STL11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 5 C I A D Drain current (continuous) at T = 100 C 3.2 C (1) I Drain current (pulsed) 14 A DM P Total power dissipation at T = 25 C 46 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 5 A, di/dt 400 A/s V (peak) V , V = 400 V. SD DS (BR)DSS DD 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.7 thj-case C/W (1) R Thermal resistance junction-pcb 58.5 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.2 A AR (2) E Single pulse avalanche energy 105 mJ AS 1. Pulse width limited by T max. J 2. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS13073 - Rev 1 page 2/13