STL120N8F7 Datasheet N-channel 80 V, 4.0 m typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features V R max. I P Order code DS DS(on) D TOT STL120N8F7 80 V 4.8 m 120 A 140 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss PowerFLAT 5x6 High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced 1 2 3 4 trench gate structure that results in very low on-state resistance, while also reducing Top View S(1, 2, 3) internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status link STL120N8F7 Product summary Order code STL120N8F7 Marking 120N8F7 Package PowerFLAT 5x6 Packing Tape and reel DS10754 - Rev 6 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL120N8F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 80 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 120 C (1) I A D Drain current (continuous) at T = 100 C 90 C (1) (2) I Drain current (pulsed) 480 A DM Drain current (continuous) at T = 25 C 23 pcb (3) I A D Drain current (continuous) at T = 100 C 17 pcb (2)(3) I Drain current (pulsed) 92 A DM (1) P Total dissipation at T = 25 C 140 W TOT C (3) P Total dissipation at T = 25 C pcb 4.8 W TOT T Storage temperature range stg -55 to 175 C T Operating junction temperature range J 1. This value is rated according to R . thj-c 2. Pulse width is limited by safe operating area. 3. This value is rated according to R . thj-pcb Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-pcb 31.3 thj-pcb C/W R Thermal resistance junction-case 1.05 thj-case 1. When mounted on a 1-inch FR-4 board, 2oz Cu, t < 10 s. DS10754 - Rev 6 page 2/16