STL25N60M2-EP Datasheet N-channel 600 V, 0.184 typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package Features Order code V T R max. I DS Jmax DS(on ) D 5 STL25N60M2-EP 650 V 0.205 16 A 4 3 Extremely low gate charge 2 1 Excellent output capacitance (C ) profile OSS Very low turn-off switching losses PowerFLAT 8x8 HV 100% avalanche tested Zener-protected Drain(5) Applications Switching applications Tailored for Very High Frequency Converters (f > 150 kHz) Gate(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 EP Driver Power source (2) source (3, 4) enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching NG1DS2PS34D5Z characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STL25N60M2-EP Device summary Order code STL25N60M2-EP Marking 25N60M2EP Package PowerFLAT 8x8 HV Packing Tape and reel DS10759 - Rev 5 - March 2018 www.st.com For further information contact your local STMicroelectronics sales office.STL25N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 16 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 64 A DM P Total dissipation at T = 25 C 125 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 16 A, di/dt 400 A/s V < V , V = 400 V. SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1 C/W thj-case (1) R Thermal resistance junction-pcb 45 C/W thj-pcb 1. When mounted on FR-4 board of inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetetive or not repetetive (pulse width limited by T ) 3.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I V = 50 V) 180 mJ AS j D AR DD DS10759 - Rev 5 page 2/16