CPC3710 250V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V / R I (min) Package Description (BR)DSX DS(on) DSS V (max) (BR)DGX The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated 250V 10 220mA SOT-89 P Circuits Divisions proprietary third-generation vertical DMOS process. The third-generation process realizes Features world class, high voltage MOSFET performance Low R at Cold Temperatures in an economical silicon gate process. Our vertical DS(on) Low On-Resistance: 10 max. at 25C DMOS process yields a robust device, with high input impedance, for use in high-power applications. The High Input Impedance CPC3710 is a highly reliable FET device that has High Breakdown Voltage: 250V P been used extensively in our solid state relays for Low V Voltage: -1.6 to -3.9V GS(off) industrial and telecommunications applications. Small Package Size SOT-89 This device excels in power applications requiring Applications low drain-source resistance, particularly in cold environments such as automotive ignition modules. Ignition Modules The CPC3710 offers a low, 10 maximum, on-state Normally-On Switches resistance at 25C. Solid State Relays Converters The CPC3710 has a minimum breakdown voltage Telecommunications of 250V , and is available in an SOT-89 package. P Power Supply As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part Description CPC3710CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Package Pinout Circuit Symbol D D G G D S S (SOT-89) DS-CPC3710-R02 1 www.ixysic.comCPC3710 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 250 V P device. Functional operation of the device at conditions beyond Gate-to-Source Voltage 15 V P those indicated in the operational sections of this data sheet is Pulsed Drain Current 600 mA 1 not implied. Total Package Dissipation 1.4 W Junction Temperature 150 C Operational Temperature -55 to +125 C Storage Temperature -55 to +125 C 1 Mounted on FR4 board 1 x1 x0.062 Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage V V = -5V, I =100A 250 - - V (BR)DSX GS D P Gate-to-Source Off Voltage V V = 5V, I =1mA -1.6 - -3.9 V GS(off) DS D Change in V with Temperatures dV /dT V = 5V, I =1A - - 4.5 mV / C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS V = -5V, V =250V - - 1 A GS DS Drain-to-Source Leakage Current I D(off) V = -5V, V =200V, T =125C - - 1 mA GS DS A Saturated Drain-to-Source Current I V = 0V, V =15V 220 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R V = 0V, I =220mA - - 10 DS(on) GS D Change in R with Temperatures dR / dT V = 0V, I =220mA - - 1.1 % / C DS(on) DS(on) GS D Forward Transconductance G I = 100mA, V = 10V 225 - - m FS D DS Input Capacitance C 100 350 ISS V = -5V GS Common Source Output Capacitance C V = 25V - 30 80 pF OSS DS f= 1MHz Reverse Transfer Capacitance C 15 40 RSS Turn-On Delay Time t 23 35 d(on) V = 25V DD Rise Time t 820 I = 150mA r D - ns V = 0V to -10V Turn-Off Delay Time t 17 25 GS d(off) R = 50 gen Fall time t 70 80 f Source-Drain Diode Voltage Drop V V = -5V, I = 150mA - 0.6 1.8 V SD GS SD Thermal Resistance (Junction to Ambient) R - - 90 - C/W JA V DD Switching Waveform & Test Circuit R L 0V 90% PULSE GENERATOR INPUT OUTPUT 10% -10V R gen t t on off t t t t f d(on) d(off) r D.U.T. V DS INPUT 90% 90% OUTPUT 0V 10% 10% R02 2 www.ixysic.com