X-On Electronics has gained recognition as a prominent supplier of CPC3710C MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPC3710C MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPC3710C IXYS

CPC3710C electronic component of IXYS
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Part No.CPC3710C
Manufacturer: IXYS
Category: MOSFETs
Description: IXYS Integrated Circuits MOSFET N Ch Dep Mode FET 250V
Datasheet: CPC3710C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7293 ea
Line Total: USD 0.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7293
10 : USD 0.567
100 : USD 0.3668
1000 : USD 0.3668
2400 : USD 0.2667
10000 : USD 0.239
25000 : USD 0.227
50000 : USD 0.2216
100000 : USD 0.2172

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Channel Mode
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Cnhts
Hts Code
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We are delighted to provide the CPC3710C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPC3710C and other electronic components in the MOSFETs category and beyond.

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CPC3710 250V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V / R I (min) Package Description (BR)DSX DS(on) DSS V (max) (BR)DGX The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated 250V 10 220mA SOT-89 P Circuits Divisions proprietary third-generation vertical DMOS process. The third-generation process realizes Features world class, high voltage MOSFET performance Low R at Cold Temperatures in an economical silicon gate process. Our vertical DS(on) Low On-Resistance: 10 max. at 25C DMOS process yields a robust device, with high input impedance, for use in high-power applications. The High Input Impedance CPC3710 is a highly reliable FET device that has High Breakdown Voltage: 250V P been used extensively in our solid state relays for Low V Voltage: -1.6 to -3.9V GS(off) industrial and telecommunications applications. Small Package Size SOT-89 This device excels in power applications requiring Applications low drain-source resistance, particularly in cold environments such as automotive ignition modules. Ignition Modules The CPC3710 offers a low, 10 maximum, on-state Normally-On Switches resistance at 25C. Solid State Relays Converters The CPC3710 has a minimum breakdown voltage Telecommunications of 250V , and is available in an SOT-89 package. P Power Supply As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part Description CPC3710CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Package Pinout Circuit Symbol D D G G D S S (SOT-89) DS-CPC3710-R02 1 www.ixysic.comCPC3710 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage 250 V P device. Functional operation of the device at conditions beyond Gate-to-Source Voltage 15 V P those indicated in the operational sections of this data sheet is Pulsed Drain Current 600 mA 1 not implied. Total Package Dissipation 1.4 W Junction Temperature 150 C Operational Temperature -55 to +125 C Storage Temperature -55 to +125 C 1 Mounted on FR4 board 1 x1 x0.062 Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage V V = -5V, I =100A 250 - - V (BR)DSX GS D P Gate-to-Source Off Voltage V V = 5V, I =1mA -1.6 - -3.9 V GS(off) DS D Change in V with Temperatures dV /dT V = 5V, I =1A - - 4.5 mV / C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS V = -5V, V =250V - - 1 A GS DS Drain-to-Source Leakage Current I D(off) V = -5V, V =200V, T =125C - - 1 mA GS DS A Saturated Drain-to-Source Current I V = 0V, V =15V 220 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R V = 0V, I =220mA - - 10 DS(on) GS D Change in R with Temperatures dR / dT V = 0V, I =220mA - - 1.1 % / C DS(on) DS(on) GS D Forward Transconductance G I = 100mA, V = 10V 225 - - m FS D DS Input Capacitance C 100 350 ISS V = -5V GS Common Source Output Capacitance C V = 25V - 30 80 pF OSS DS f= 1MHz Reverse Transfer Capacitance C 15 40 RSS Turn-On Delay Time t 23 35 d(on) V = 25V DD Rise Time t 820 I = 150mA r D - ns V = 0V to -10V Turn-Off Delay Time t 17 25 GS d(off) R = 50 gen Fall time t 70 80 f Source-Drain Diode Voltage Drop V V = -5V, I = 150mA - 0.6 1.8 V SD GS SD Thermal Resistance (Junction to Ambient) R - - 90 - C/W JA V DD Switching Waveform & Test Circuit R L 0V 90% PULSE GENERATOR INPUT OUTPUT 10% -10V R gen t t on off t t t t f d(on) d(off) r D.U.T. V DS INPUT 90% 90% OUTPUT 0V 10% 10% R02 2 www.ixysic.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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