X-On Electronics has gained recognition as a prominent supplier of PBSM5240PFH,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PBSM5240PFH,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PBSM5240PFH,115 Nexperia

PBSM5240PFH,115 electronic component of Nexperia
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Part No.PBSM5240PFH,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 40V 2A PNP Trans N-chan Trench MOSFET
Datasheet: PBSM5240PFH,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5865 ea
Line Total: USD 0.59 
Availability - 2805
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2805
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5865
3000 : USD 0.1598
6000 : USD 0.138
9000 : USD 0.1299

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSM5240PFH,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSM5240PFH,115 and other electronic components in the MOSFETs category and beyond.

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PBSM5240PFH 40 V, 2 A PNP low V (BISS) transistor with N-channel CEsat Trench MOSFET Rev. 1 20 June 2012 Product data sheet 1. Product profile 1.1 General description Combination of PNP low V Breakthrough In Small Signal (BISS) transistor and CEsat N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High energy efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit PNP low V (BISS) transistor CEsat V collector-emitter voltage open base - - 40 V CEO 1 I collector current - 1.8 A C 1 5 I repetitive peak collector -- 2A CRM current 1 I peak collector current single pulse t 1ms -- 3A CM p 2 R collector-emitter I = 500 mA - 240 340 m CEsat C saturation resistance I = 50 mA BPBSM5240PFH Nexperia 40 V, 2 A PNP BISS/Trench MOSFET module Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit N-channel Trench MOSFET V drain-source voltage T =25 C --30 V DS amb V gate-source voltage T =25 C-- 8V GS amb 3 I drain current T =25 C --0.66A D amb V =10V GS 4 R drain-source on-state T =25 C V =4.5 V - 370 580 m DSon j GS resistance I =0.2A D 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 2 Pulse test: t 300 s 0.02. p 2 3 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 4 Pulse test: t 300 s 0.01. p 5 Pulse test: t 20 ms 0.10. p 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1emitter 6, 7 5 4 6 54 2base 3drain 78 4source 5gate 123 1 2 3, 8 6 collector Transparent top view 017aaa079 7 collector 8drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSM5240PFH DFN2020-6 plastic thermal enhanced ultra thin small outline SOT1118 package no leads 6 terminals body 2 2 0.65 mm 4. Marking Table 4. Marking code Type number Marking code PBSM5240PFH 1T PBSM5240PFH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 20 June 2012 2 of 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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