STP10LN80K5 STMicroelectronics

STP10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D STP10LN80K5 800 V 0.63 8 A Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP10LN80K5 10LN80K5 TO-220 Tube December 2015 DocID027747 Rev 2 1/14 www.st.com This is information on a product in full production. Contents STP10LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 5 Revision history ............................................................................ 13 2/14 DocID027747 Rev 2