X-On Electronics has gained recognition as a prominent supplier of STP11NK40ZFP MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP11NK40ZFP MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP11NK40ZFP STMicroelectronics

STP11NK40ZFP electronic component of STMicroelectronics
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Part No.STP11NK40ZFP
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 400V; 5.67A; 30W; TO220FP
Datasheet: STP11NK40ZFP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
11: USD 1.8984 ea
Line Total: USD 20.88 
Availability - 384
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
188
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 3.08
10 : USD 2.422
19 : USD 0.924
51 : USD 0.868

384
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 11
Multiples : 1
11 : USD 1.8984
100 : USD 1.666
500 : USD 1.5166
1000 : USD 0.9099
2500 : USD 0.5959
10000 : USD 0.5899

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Kind Of Package
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the STP11NK40ZFP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP11NK40ZFP and other electronic components in the MOSFETs category and beyond.

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STB11NK40ZT4, STP11NK40Z, STP11NK40ZFP Datasheet N-channel 400 V, 0.47 typ., 9 A SuperMESH Power MOSFETs 2 in a D PAK, TO220 and TO 220FP packages TAB Features TAB V R max. I Order code Package DS DS(on) D 3 1 2 2 3 STB11NK40ZT4 D PAK D PAK TO-220 2 1 400 V 0.55 9 A STP11NK40Z TO-220 STP11NK40ZFP TO-220FP 3 100% avalanche tested 2 1 TO-220FP Gate charge minimized Very low intrinsic capacitance D(2, TAB) Zener-protected Applications Switching applications G(1) Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an S(3) optimization of the well-established PowerMESH. In addition to a significant NG1D2TS3Z reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STB11NK40ZT4 STP11NK40Z STP11NK40ZFP DS2843 - Rev 8 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB11NK40ZT4, STP11NK40Z, STP11NK40ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220FP TO-220 V Drain-source voltage 400 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 9 9 A D C (1) I Drain current (continuous) at T = 100 C 5.67 5.67 A D C (2) (1) I Drain current (pulsed) 36 36 A DM P Total dissipation at T = 25 C 110 30 W TOT C Gate-source human body model ESD 3.5 kV (C = 100 pF, R = 1.5 k) (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all three leads to V 2.5 kV ISO external heat sink (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 9 A, di/dt 200 A/s, V = 80% V , T T . SD DD (BR)DSS j JMAX Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK TO-220 TO-220FP R Thermal resistance junction-case 1.14 4.17 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 9 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 190 mJ AS j D AR DD DS2843 - Rev 8 page 2/26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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