STB11NK40ZT4, STP11NK40Z, STP11NK40ZFP Datasheet N-channel 400 V, 0.47 typ., 9 A SuperMESH Power MOSFETs 2 in a D PAK, TO220 and TO 220FP packages TAB Features TAB V R max. I Order code Package DS DS(on) D 3 1 2 2 3 STB11NK40ZT4 D PAK D PAK TO-220 2 1 400 V 0.55 9 A STP11NK40Z TO-220 STP11NK40ZFP TO-220FP 3 100% avalanche tested 2 1 TO-220FP Gate charge minimized Very low intrinsic capacitance D(2, TAB) Zener-protected Applications Switching applications G(1) Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an S(3) optimization of the well-established PowerMESH. In addition to a significant NG1D2TS3Z reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STB11NK40ZT4 STP11NK40Z STP11NK40ZFP DS2843 - Rev 8 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB11NK40ZT4, STP11NK40Z, STP11NK40ZFP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220FP TO-220 V Drain-source voltage 400 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 9 9 A D C (1) I Drain current (continuous) at T = 100 C 5.67 5.67 A D C (2) (1) I Drain current (pulsed) 36 36 A DM P Total dissipation at T = 25 C 110 30 W TOT C Gate-source human body model ESD 3.5 kV (C = 100 pF, R = 1.5 k) (3) dv/dt Peak diode recovery voltage slope 4.5 V/ns Insulation withstand voltage (RMS) from all three leads to V 2.5 kV ISO external heat sink (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 9 A, di/dt 200 A/s, V = 80% V , T T . SD DD (BR)DSS j JMAX Table 2. Thermal data Value Symbol Parameter Unit 2 D PAK TO-220 TO-220FP R Thermal resistance junction-case 1.14 4.17 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 9 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 190 mJ AS j D AR DD DS2843 - Rev 8 page 2/26