X-On Electronics has gained recognition as a prominent supplier of STP18N60DM2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP18N60DM2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP18N60DM2 STMicroelectronics

STP18N60DM2 electronic component of STMicroelectronics
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Part No.STP18N60DM2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET PTD HIGH VOLTAGE
Datasheet: STP18N60DM2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.1463 ea
Line Total: USD 2146.3 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 2.1463
2000 : USD 2.1373
3000 : USD 2.1282
4000 : USD 2.119
5000 : USD 2.1096
10000 : USD 2.1002
20000 : USD 2.0907
25000 : USD 2.0809
50000 : USD 2.0712

0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2566
10 : USD 1.2322
30 : USD 1.2153
100 : USD 1.1984

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 7.3529
10 : USD 2.6512
25 : USD 2.4958

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP18N60DM2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP18N60DM2 and other electronic components in the MOSFETs category and beyond.

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STP18N60DM2 Datasheet N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Features V R max. I Order code DS DS(on) D TAB STP18N60DM2 600 V 0.295 12 A Fast-recovery body diode 3 2 Extremely low gate charge and input capacitance 1 TO-220 Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status links STP18N60DM2 Product summary Order code STP18N60DM2 Marking 18N60DM2 Package TO-220 Packing Tube DS10960 - Rev 5 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STP18N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 12 A D case I Drain current (continuous) at T = 100 C 7.6 A D case (1) I Drain current (pulsed) 48 A DM P Total power dissipation at T = 25 C 110 W TOT case (2) dv/dt Peak diode recovery voltage slope 40 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range C stg 55 to 150 T Operating junction temperature range C j 1. Pulse width is limited by safe operating area. 2. I 12, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 thj-case C/W R Thermal resistance junction-ambient 62.5 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 2.5 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 380 mJ AR (starting T = 25 C, I = I , V = 50 V) j D AR DD DS10960 - Rev 5 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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