STB19NF20, STD19NF20 STF19NF20, STP19NF20 Datasheet N-channel 200 V, 0.11 , 15 A, MESH OVERLAY Power MOSFETs 2 in D PAK, DPAK, TO220FP and TO-220 packages Features TAB TAB 2 3 Type V R max. I Package DS DS(on) D 3 1 1 2 DPAK D PAK 2 STB19NF20 D PAK TAB STD19NF20 DPAK 200 V 0.16 15 A STF19NF20 TO-220FP 3 2 3 1 STP19NF20 TO-220 2 1 TO-220 TO-220FP Extremely high dv/dt capability Gate charge minimized D(2, TAB) Very low intrinsic capacitance Applications G(1) Switching applications Description S(3) AM01475v1 noZen These Power MOSFETs are designed using STMicroelectronics consolidated strip- layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Product status links STB19NF20 STD19NF20 STF19NF20 STP19NF20 DS4935 - Rev 7 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB19NF20,STD19NF20,STF19NF20,STP19NF20 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, DPAK, TO-220FP TO-220 V Drain-source voltage 200 DS V Gate-source voltage 20 V GS (1) Drain current (continuous) at T = 25 C 15 C 15 I A D (1) Drain current (continuous) at T = 100 C 9.45 C 9.45 (2) (1) I Drain current (pulsed) 60 60 A DM P Total dissipation at T = 25 C 90 25 W TOT case Insulation withstand voltage (RMS) from all three leads to V 2.5 kV ISO external heat sink (t = 1 s, T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 15 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. This value is limited by package. 2. Pulse width is limited by safe operating area. 3. I 15 A, di/dt 300 A/s, V = 80 % V SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.39 5 thj-case (1) R Thermal resistance junction-pcb 35 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 thj-amb 1. When mounted on an 1-inch FR-4, 2oz Cu board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 15 A AR jmax E Single-pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 110 mJ AS j D AR DD DS4935 - Rev 7 page 2/30