STP20N90K5 STMicroelectronics

STP20N90K5 Datasheet N-channel 900 V, 0.21 typ., 20 A MDmesh K5 Power MOSFET in a TO220 package Features V R max. I Order code DS DS(on ) D TAB STP20N90K5 900 V 0.25 20 A Industrys lowest R x area DS(on) 3 2 Industrys best FoM (figure of merit) 1 TO-220 Ultra-low gate charge 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) AM01475V1 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STP20N90K5 Product summary Order code STP20N90K5 Marking 20N90K5 Package TO-220 Packing Tube DS11569 - Rev 4 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STP20N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 20 A D C I Drain current (continuous) at T = 100 C 13 A D C (1) I Drain current (pulsed) 80 A D P Total power dissipation at T = 25 C 250 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 20A, di/dt 100 A/s V peak V , V = 450 V. SD DS (BR)DSS DD 3. V 720 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 6.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 500 mJ AS j D AR DD DS11569 - Rev 4 page 2/13