STP16NF06L STMicroelectronics

STP16NF06L STP16NF06LFP N-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FP STripFET II POWER MOSFET TYPE V R I DSS DS(on) D STP16NF06L 60 V <0.09 16 A STP60NF06LFP 60 V <0.09 11 A TYPICAL R (on) = 0.07 DS EXCEPTIONAL dv/dt CAPABILITY o LOW GATE CHARGE AT 100 C LOW THRESHOLD DRIVE 3 3 2 2 1 1 DESCRIPTION TO-220 TO-220FP This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROL, AUDIO AMPLIFIERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP16NF06L STP16NF06LFP V Drain-source Voltage (V = 0) 60 V DS GS V Drain-gate Voltage (R = 20 k ) DGR GS 60 V V Gate- source Voltage 16 V GS I Drain Current (continuous) at T = 25C 16 11(*) A D C I Drain Current (continuous) at T = 100C 11 7.5(*) A D C I () Drain Current (pulsed) 64 44(*) A DM P Total Dissipation at T = 25C tot C 45 25 W Derating Factor 0.3 0.17 W/C (1) dv/dt Peak Diode Recovery voltage slope 23 V/ns (2) E Single Pulse Avalanche Energy 127 mJ AS V Insulation Withstand Voltage (DC) -------- 2500 V ISO T Storage Temperature stg -55 to 175 C T Operating Junction Temperature j () Pulse width limited by safe operating area. (1) I 16A, di/dt 210A/s, V V , T T SD DD (BR)DSS j JMAX. o (2) Starting T = 25 C, I = 8A, V = 30V (*) Current Limited by packages thermal resistance j D DD March 2004 1/9 .STP16NF06L/FP THERMAL DATA TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 3.33 6 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source I = 250 A, V = 0 60 V V D GS (BR)DSS Breakdown Voltage V = Max Rating I Zero Gate Voltage 1 A DS DSS Drain Current (V = 0) V = Max Rating T = 125C 10 A GS DS C Gate-body Leakage V = 16V 100 nA GS I GSS Current (V = 0) DS (1) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V I = 250 A12.5V GS(th) DS GS D Static Drain-source On V = 5 V I = 8 A 0.08 0.10 R GS D DS(on) Resistance V = 10 V I = 8 A 0.07 0.09 GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) Forward Transconductance V > I x R 17 S g DS D(on) DS(on)max, fs I =8 A D C Input Capacitance V = 25V, f = 1 MHz, V = 0 345 pF DS GS iss Output Capacitance 72 pF C oss Reverse Transfer 29 pF C rss Capacitance 2/9