STP17N62K3 STMicroelectronics

STF17N62K3 STP17N62K3, STW17N62K3 N-channel 620 V, 0.28 , 15.5 A, TO-220FP, TO-220, TO-247 SuperMESH3 Power MOSFET Features R DS(on) Order codes V I Pw DSS D max. 3 3 2 2 1 STF17N62K3 620 V < 0.34 15.5 A 40 W 1 TO-247 TO-220 STP17N62K3 620 V < 0.34 15.5 A 190 W STW17N62K3 620 V < 0.34 15.5 A 190 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized 3 2 TO-220FP 1 Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram D(2) Applications Switching applications Description G(1) This SuperMESH3 Power MOSFET is the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and S(3) high avalanche capability, rendering it suitable for AM01476v1 the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STF17N62K3 17N62K3 TO-220FP Tube STP17N62K3 17N62K3 TO-220 Tube STW17N62K3 17N62K3 TO-247 Tube July 2011 Doc ID 15046 Rev 2 1/17 www.st.com 17Contents STF17N62K3, STP17N62K3, STW17N62K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 16 2/17 Doc ID 15046 Rev 2