X-On Electronics has gained recognition as a prominent supplier of STP165N10F4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP165N10F4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP165N10F4 STMicroelectronics

Name: STP165N10F4
Brand: STMicroelectronics
SKU: STP165N10F4_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STP165N10F4 electronic component of STMicroelectronics

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Part No.	STP165N10F4
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	N-Channel 100 V 120A (Tc) 315W (Tc) Through Hole TO-220
Datasheet:	STP165N10F4 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STP165N10F4 More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 3.3931 10 : USD 3.0432 100 : USD 2.4938	N/A Obsolete

0 MOQ : 10 Multiples : 1	10 : USD 3.2058 25 : USD 3.087 100 : USD 3.087 250 : USD 2.9682 1000 : USD 2.9682	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 6.2667 10 : USD 4.104 25 : USD 3.8772 100 : USD 3.3588 500 : USD 2.862 1000 : USD 2.5056	N/A Obsolete

0 MOQ : 6 Multiples : 1	6 : USD 2.9648 10 : USD 2.5442 25 : USD 2.2548 100 : USD 2.2098	N/A Obsolete

We are delighted to provide the STP165N10F4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP165N10F4 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STP165N10F4 N-channel 100 V, 4.4 m, 120 A TO-220 STripFET DeepGATE Power MOSFET Features Order code V R max I DSS DS(on) D STP165N10F4 100 V < 5.5 m 120 A N-channel enhancement mode 3 100% avalanche rated 2 1 Low gate charge TO-220 Very low on-resistance Application Switching applications Figure 1. Internal schematic diagram Description The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET DeepGATE technology with a new gate structure. The product is tailored to minimize on-resistance. 3 - V Table 1. Device summary Order code Marking Package Packaging STP165N10F4 165N10F4 TO-220 Tube November 2010 Doc ID 15781 Rev 2 1/12 www.st.com 12 Contents STP165N10F4 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 15781 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 120 A 120 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 5.5 mOhms 5.5 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Pd - Power Dissipation 315 W 315 W
Mounting Style through hole through hole
Package / Case TO - 220 - 3 TO - 220 - 3
Packaging Tube Tube
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 4 V 4 V
Qg - Gate Charge 192 nC 192 nC
Tradename stripfet stripfet
Configuration single single
Series stp165n10f4 stp165n10f4
Brand Stmicroelectronics Stmicroelectronics
Continuous Drain Current 120 A 120 A
Drain-Source Breakdown Voltage 100 V 100 V
Gate-Source Breakdown Voltage 4 V 4 V
Power Dissipation 315 W 315 W
Rds On 5.5 mohms 5.5 mohms
Gate Charge Qg 192 nC 192 nC
Factory Pack Quantity : 50 50
Transistor Type 1 n - channel 1 n - channel
Type n - channel stripfet deepgate power mosfet n - channel stripfet deepgate power mosfet
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000