X-On Electronics has gained recognition as a prominent supplier of STP165N10F4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP165N10F4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP165N10F4 STMicroelectronics

STP165N10F4 electronic component of STMicroelectronics
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Part No.STP165N10F4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: N-Channel 100 V 120A (Tc) 315W (Tc) Through Hole TO-220
Datasheet: STP165N10F4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.2853
10 : USD 2.9466
100 : USD 2.4146
N/A

Obsolete
0
MOQ : 10
Multiples : 1
10 : USD 3.104
25 : USD 2.989
100 : USD 2.989
250 : USD 2.874
1000 : USD 2.874
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.0677
10 : USD 3.9737
25 : USD 3.7541
100 : USD 3.2522
500 : USD 2.7712
1000 : USD 2.426
N/A

Obsolete
0
MOQ : 6
Multiples : 1
6 : USD 2.8707
10 : USD 2.4634
25 : USD 2.1833
100 : USD 2.1396
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the STP165N10F4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP165N10F4 and other electronic components in the MOSFETs category and beyond.

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STP165N10F4 N-channel 100 V, 4.4 m, 120 A TO-220 STripFET DeepGATE Power MOSFET Features Order code V R max I DSS DS(on) D STP165N10F4 100 V < 5.5 m 120 A N-channel enhancement mode 3 100% avalanche rated 2 1 Low gate charge TO-220 Very low on-resistance Application Switching applications Figure 1. Internal schematic diagram Description The STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET DeepGATE technology with a new gate structure. The product is tailored to minimize on-resistance. 3 - V Table 1. Device summary Order code Marking Package Packaging STP165N10F4 165N10F4 TO-220 Tube November 2010 Doc ID 15781 Rev 2 1/12 www.st.com 12 Contents STP165N10F4 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 15781 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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