STP15NM65N STMicroelectronics

STF15NM65N,STFI15NM65N N-channel 650 V, 0.35 typ., 12 A MDmesh II Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V T R max. I DSS jmax DS(on) D STF15NM65N 3 2 710 V 0.38 12 A 1 STFI15NM65N 1 TO-220FP 2 3 100% avalanche tested 2 I PAKFP Low input capacitance and gate charge (TO-281) Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFETs associates a vertical structure to the companys strip layout to yield one of the worlds * lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Packages Packing STF15NM65N TO-220FP 15NM65N Tube 2 STFI15NM65N I PAKFP (TO-281) July 2016 DocID13853 Rev 4 1/15 This is information on a product in full production. www.st.comContents STF15NM65N, STFI15NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 8 4 Package information . 9 4.1 TO-220FP package information 10 4.2 I2PAKFP (TO-281) package information . 12 5 Revision history . 14 2/15 DocID13853 Rev 4