STP14NM50N STMicroelectronics

STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 typ., 12 A MDmesh II Power MOSFETs in TO-220FP, IPAK and TO-220 packages Datasheet - production data Features V R DS DS(on) Order codes I D T max Jmax 3 STF14NM50N 2 1 STI14NM50N 550 V 0.32 12 A TO-220FP STP14NM50N TAB TAB 100% avalanche tested Low input capacitance and gate charge 3 2 3 I PAK TO-220 2 Low gate input resistance 2 1 1 Applications Figure 1. Internal schematic diagram Switching applications % 7 Description These devices are N-channel Power MOSFET developed using the second generation of * MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is 6 therefore suitable for the most demanding high efficiency converters. 0 Y Table 1. Device summary Order codes Marking Package Packaging STF14NM50N TO-220FP 2 STI14NM50N 14NM50N I PAK Tube STP14NM50N TO-220 June 2014 DocID16832 Rev 7 1/18 This is information on a product in full production. www.st.com 18Contents STF14NM50N, STI14NM50N, STP14NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 4.1 TO-220FP, STF14NM50N .11 2 4.2 I PAK, STI14NM50N 13 4.3 TO-220, STP14NM50N 15 5 Revision history . 17 2/18 DocID16832 Rev 7