STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packages Features TAB V R max. I Order codes DS DS(on) D 3 1 2 D PAK 3 STB12NM50T4 2 1 TO-220FP TAB STP12NM50 500 V 350 m 12 A STP12NM50FP 3 2 100% avalanche tested 1 TO-220 Low input capacitance and gate charge Low gate input resistance D(2, TAB) Applications Switching applications G(1) Description These N-channel Power MOSFETs are developed using STMicroelectronics S(3) revolutionary MDmesh technology, which associates the multiple drain process with NG1D2TS3 the company s PowerMESH horizontal layout. These devices offer extremely low on- resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Product status link STB12NM50T4 STP12NM50 STP12NM50FP DS1944 - Rev 12 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.STB12NM50T4, STP12NM50, STP12NM50FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 TO-220FP V Gate-source voltage 30 V GS (1) Drain current (continuous) at T = 25 C 12 12 C I A D (1) Drain current (continuous) at T = 100 C 7.5 7.5 C (2) (1) I Drain current pulsed 48 A 48 DM P Total power dissipation at T = 25 C 160 35 W TOT C Insulation withstand voltage (RMS) from all three leads to V 2.5 kV ISO external heat sink (t = 1 s, T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range C J -65 to 150 T Storage temperature range C stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 12 A, di/dt 400 A/s, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 2.78 3.57 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-a (1) R Thermal resistance junction-pcb 35 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 6 A AS (pulse width limited by T max) J Single-pulse avalanche energy E 400 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AS DD DS1944 - Rev 12 page 2/20