X-On Electronics has gained recognition as a prominent supplier of STP12NM50 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP12NM50 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP12NM50 STMicroelectronics

STP12NM50 electronic component of STMicroelectronics
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Part No.STP12NM50
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Datasheet: STP12NM50 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.264 ea
Line Total: USD 5.26 
Availability - 348
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
348
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 5.264
9 : USD 1.932
25 : USD 1.82

   
Manufacturer
Product Category
Case
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Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the STP12NM50 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP12NM50 and other electronic components in the MOSFETs category and beyond.

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STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 m typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packages Features TAB V R max. I Order codes DS DS(on) D 3 1 2 D PAK 3 STB12NM50T4 2 1 TO-220FP TAB STP12NM50 500 V 350 m 12 A STP12NM50FP 3 2 100% avalanche tested 1 TO-220 Low input capacitance and gate charge Low gate input resistance D(2, TAB) Applications Switching applications G(1) Description These N-channel Power MOSFETs are developed using STMicroelectronics S(3) revolutionary MDmesh technology, which associates the multiple drain process with NG1D2TS3 the company s PowerMESH horizontal layout. These devices offer extremely low on- resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Product status link STB12NM50T4 STP12NM50 STP12NM50FP DS1944 - Rev 12 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.STB12NM50T4, STP12NM50, STP12NM50FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 TO-220FP V Gate-source voltage 30 V GS (1) Drain current (continuous) at T = 25 C 12 12 C I A D (1) Drain current (continuous) at T = 100 C 7.5 7.5 C (2) (1) I Drain current pulsed 48 A 48 DM P Total power dissipation at T = 25 C 160 35 W TOT C Insulation withstand voltage (RMS) from all three leads to V 2.5 kV ISO external heat sink (t = 1 s, T = 25 C) C (3) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range C J -65 to 150 T Storage temperature range C stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 12 A, di/dt 400 A/s, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 2.78 3.57 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-a (1) R Thermal resistance junction-pcb 35 C/W thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 6 A AS (pulse width limited by T max) J Single-pulse avalanche energy E 400 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AS DD DS1944 - Rev 12 page 2/20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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