STP12PF06 STMicroelectronics

STP12PF06 STF12PF06 P-CHANNEL 60V - 0.18 - 12A TO-220/TO-220FP STripFET II POWER MOSFET Table 1: General Features Figure 1:Package TYPE V R I DSS DS(on) D STP12PF06 60 V < 0.20 12 A STF12PF06 60 V < 0.20 12 A TYPICAL R (on) = 0.18 DS EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 3 3 2 2 APPLICATION ORIENTED 1 1 CHARACTERIZATION TO-220 TO-220FP DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip-based process. The resulting transistor shows extremely high packing density for low on- Figure 2: Internal Schematic Diagram resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS Table 2: Order Codes PART NUMBER MARKING PACKAGE PACKAGING STP12PF06 P12PF06 TO-220 TUBE STF12PF06 F12PF06 TO-220FP TUBE Table 3: ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP20PF06 STF20PF06 V Drain-source Voltage (V = 0) 60 V DS GS V Drain-gate Voltage (R = 20 k ) 60 V DGR GS V Gate- source Voltage 20 V GS I Drain Current (continuous) at T = 25C 12 8 A D C I Drain Current (continuous) at T = 100C 8.4 5.6 A D C I () Drain Current (pulsed) 48 32 A DM P Total Dissipation at T = 25C 60 225 W tot C Derating Factor 0.4 0.17 W/C (1) dv/dt Peak Diode Recovery voltage slope 6 V/ns (2) E Single Pulse Avalanche Energy 200 mJ AS T Storage Temperature stg -55 to 175 C T Operating Junction Temperature j () Pulse width limited by safe operating area. (1) I 12A, di/dt 200A/s, V V , T T SD DD (BR)DSS j JMAX NOTE:For the P-CHANNEL MOSFET actual polarity of voltages o (2) Starting T = 25 C, I = 12A, V = 25V j D DD and current has to be reversed. Rev. 2.0 March 2005 1/10STP12PF06 STF12PF06 Table 4: THERMAL DATA TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 2.5 5.35 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE Table 5: OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit I = 250 A, V = 0 V Drain-source 60 V D GS (BR)DSS Breakdown Voltage Zero Gate Voltage V = Max Rating I DS 1 A DSS Drain Current (V = 0) V = Max Rating T = 125C 10 A GS DS C Gate-body Leakage V = 20V I 100 nA GSS GS Current (V = 0) DS (*) Table 6: ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V I = 250 A 23.4 4 V GS(th) DS GS D V = 10 V I = 10 A R Static Drain-source On 0.18 0.20 DS(on) GS D Resistance Table 7: DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (2) g Forward Transconductance V = 15 V I = 6 A 2.5 6 S DS D fs C Input Capacitance V = 25V f = 1 MHz V = 0 850 pF iss DS GS Output Capacitance 230 pF C oss Reverse Transfer 75 pF C rss Capacitance 2/10