STP11NM65N STMicroelectronics

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packages Datasheet - production data Features TAB V R DSS DS(on) 3 Order codes I D 1 T max Jmax 3 DPAK 2 1 STD11NM65N STF11NM65N TO-220FP 710 V < 0.455 11 A STFI11NM65N TAB STP11NM65N 100% avalanche tested 3 1 2 2 3 1 Low input capacitance and gate charge IPAKFP TO-220 low gate input resistance Figure 1. Internal schematic diagram Applications Switching applications % 7 Description These devices are N-channel Power MOSFETs developed using the second generation of * MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is 6 therefore suitable for the most demanding high efficiency converters. 0 Y Table 1. Device summary Order codes Marking Packages Packaging STD11NM65N DPAK Tape and reel STF11NM65N TO-220FP 11NM65N STFI11NM65N IPAKFP Tube STP11NM65N TO-220 July 2013 Doc ID 13476 Rev 4 1/21 This is information on a product in full production. www.st.comContents STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 13476 Rev 4