STP120N4F6 STMicroelectronics

STP120N4F6 N-channel 40 V, 3.8 m , 80 A, TO-220 STripFET VI DeepGATE Power MOSFET Features R DS(on) Order code V I DSS D max. (1) STP120N4F6 40 V 4.3 m 80 A 1. Current limited by package 3 Standard threshold drive 2 1 100% avalanche tested TO-220 Application Switching applications Automotive Figure 1. Internal schematic diagram Description This device is a 40 V N-channel STripFET VI OR 4 Power MOSFET based on the STs proprietary STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order code Marking Package Packaging STP120N4F6 120N4F6 TO-220 Tube May 2011 Doc ID 018846 Rev 1 1/13 www.st.com 13Contents STP120N4F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data 10 5 Revision history . 13 2/13 Doc ID 018846 Rev 1