STP141NF55 STMicroelectronics

STB141NF55, STP141NF55 Datasheet Automotive N-channel 55 V, 6.5 m typ., 80 A STripFET II Power MOSFETs in DPAK and TO-220 packages Features V R I Order codes DSS DS(on) D TAB TAB STB141NF55 55 V < 8 m 80 A STP141NF55 3 1 3 2 D PAK TO-220 2 1 AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested D(2, TAB) Low gate charge Applications Switching applications G(1) Description S(3) These Power MOSFETs have been developed using STMicroelectronics unique NG1D2TS3 STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status links STB141NF55 STP141NF55 Product summary Order code STB141NF55 Marking B141NF55 Package DPAK Packing Tape and reel Order code STP141NF55 Marking P141NF55 Package TO-220 Packing Tube DS5413 - Rev 2 - January 2022 www.st.com For further information contact your local STMicroelectronics sales office.STB141NF55, STP141NF55 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 55 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 80 A C D (1) Drain current (continuous) at T = 100 C I 80 A D c (2) I Drain current (pulsed) 320 A DM P Total power dissipation at T = 25 C TOT C 300 W Derating factor 2 W/C (3) Peak diode recovery voltage slope 10 V/ns dv/dt (4) E Single pulse avalanche energy 1.3 J AS T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. I 80 A, di/dt 300A/s, V = 80 % V SD DD (BR)DSS 4. Starting T = 25C, I = 40 A, V = 30 V j D DD Table 2. Thermal data Value Symbol Parameter Unit 2 TO -220 D PAK Thermal resistance R 0.5 C/W thj-case junction-case max Thermal resistance R 62.5 - C/W thj-amb junction-ambient max Thermal resistance (1) R - 35 C/W thj-pcb junction-pcb max Maximum lead temperature for T soldering purpose (for 300 C I 10 sec, 1.6 mm from case) 1. When mounted on 1 inch, FR4 board, 2 oz Cu DS5413 - Rev 2 page 2/17