STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet production data Features % Order code V T R max I DS Jmax DS(on) D % STP16N65M2 710 V 0.36 11 A STU16N65M2 710 V 0.36 11 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected 2 7 . ,3 Applications Switching applications Figure 1. Internal schematic diagram , TAB Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STP16N65M2 16N65M2 TO-220 Tube STU16N65M2 16N65M2 IPAK Tube October 2014 DocID027086 Rev 1 1/16 This is information on a product in full production. www.st.com 7 7 Contents STP16N65M2, STU16N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 4.1 TO-220, STP16N65M2 11 4.2 IPAK, STU16N65M2 . 13 5 Revision history . 15 2/16 DocID027086 Rev 1