STP16NK60Z STMicroelectronics

STF16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 , 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features R DS(on) Type V I Pw DSS D max (1) STF16NK60Z 600 V < 0.42 14 A 40 W 3 3 2 2 1 STP16NK60Z 600 V < 0.42 14 A 190 W 1 TO-220 STW16NK60Z 600 V < 0.42 14 A 190 W TO-220FP 1. Limited by package. 100% avalanche tested 3 Extremely high dv/dt capability 2 1 Gate charge minimized TO-247 Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram Application D(2) Switching applications Description The new SuperMESH series of Power G(1) MOSFETS is the result of further design improvements on ST s well-established strip- based PowerMESH layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding S(3) applications. The SuperMESH devices further AM01476v1 complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh products. Table 1. Device summary Order codes Marking Package Packaging STF16NK60Z F16NK60Z TO-220FP STP16NK60Z P16NK60Z TO-220 Tube STW16NK60Z W16NK60Z TO-247 December 2009 Doc ID 10249 Rev 5 1/15 www.st.com 15Contents STF16NK60Z, STP16NK60Z, STW16NK60Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 14 2/15 Doc ID 10249 Rev 5