X-On Electronics has gained recognition as a prominent supplier of STP170N8F7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP170N8F7 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP170N8F7 STMicroelectronics

Name: STP170N8F7
Brand: STMicroelectronics
SKU: STP170N8F7_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STP170N8F7 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STP170N8F7
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	STMicroelectronics MOSFET
Datasheet:	STP170N8F7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.6052 ea
Line Total: USD 3.61

Availability - 9
Ship by Wed. 19 Mar to Mon. 24 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

STP170N8F7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

9

Ship by Wed. 19 Mar to Mon. 24 Mar

MOQ : 1
Multiples : 1

1 : USD 3.6052
10 : USD 2.6414
50 : USD 2.1227
100 : USD 1.8648
500 : USD 1.7469
1000 : USD 1.6964

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

120 A 120 A

Vds - Drain-Source Breakdown Voltage

80 V 80 V

Rds On - Drain-Source Resistance

3.9 mOhms 3.9 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

2.5 v to 4.5 V 2.5 v to 4.5 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

250 W 250 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 220 - 3 TO - 220 - 3

Technology

- -

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

+/- 20 V +/- 20 V

Qg - Gate Charge

120 nC 120 nC

Channel Mode

Enhancement Enhancement

Tradename

Stripfet Stripfet

Series

N - Channel Stripfet N - Channel Stripfet

Brand

Stmicroelectronics Stmicroelectronics

Fall Time

37 ns 37 ns

Rise Time

53 ns 53 ns

Typical Turn-Off Delay Time

79 ns 79 ns

Typical Turn-On Delay Time

38 ns 38 ns

Configuration

Single Single

Height

4.6 mm 4.6 mm

Length

15.75 mm 15.75 mm

Product

Power Mosfet Power Mosfet

Type

Stripfet F7 Stripfet F7

Width

10.4 mm 10.4 mm

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Factory Pack Quantity :

1000 1000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

STP170N8F7 Alternative Parts

We are delighted to provide the STP170N8F7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP170N8F7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STP170N8F7 N-channel 80 V, 0.003 typ., 120 A, STripFET F7 Power MOSFET in TO-220 package Datasheet production data Features Order code V R max. I P DS DS(on) D TOT TAB STP170N8F7 80 V 0.0039 120 A 250 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) 3 2 1 Low C /C ratio for EMI immunity rss iss TO-220 High avalanche ruggedness Applications Switching applications Figure 1. Internal schematic diagram Description % 7 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more * efficient switching. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STP170N8F7 170N8F7 TO-220 Tube February 2015 DocID024550 Rev 3 1/12 This is information on a product in full production. www.st.com 12Contents STP170N8F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID024550 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
9 Ship by Wed. 19 Mar to Mon. 24 Mar MOQ : 1 Multiples : 1	1 : USD 3.6052 10 : USD 2.6414 50 : USD 2.1227 100 : USD 1.8648 500 : USD 1.7469 1000 : USD 1.6964

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