STD16N50M2, STF16N50M2, STP16N50M2 Datasheet N-channel 500 V, 0.24 typ., 13 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB 3 2 V at T 1 DS J R max. I Order code Packages DS(on) D DPAK max. TAB STD16N50M2 DPAK STF16N50M2 550 V 0.28 13 A TO-220FP 3 3 2 2 1 STP16N50M2 TO-220 1 TO-220 TO-220FP Extremely low gate charge D(2, TAB) Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD16N50M2 STF16N50M2 STP16N50M2 DS10450 - Rev 6 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD16N50M2, STF16N50M2, STP16N50M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220 TO-220FP V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 13 A D C I Drain current (continuous) at T = 100 C 8 A D C (1) I Drain current (pulsed) 52 A DM P Total power dissipation at T = 25 C 110 25 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt Insulation withstand voltage (RMS) from all V three leads to external heat sink (t = 1 s, 2500 V ISO T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 13 A, di/dt 400 A/s, V < V , V = 80% V SD DS peak (BR)DSS DD (BR)DSS 3. V 400 V DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.14 5 thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 215 mJ AS j D AR DD DS10450 - Rev 6 page 2/24