X-On Electronics has gained recognition as a prominent supplier of STP16N50M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP16N50M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP16N50M2 STMicroelectronics

STP16N50M2 electronic component of STMicroelectronics
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Part No.STP16N50M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET
Datasheet: STP16N50M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
62: USD 0.52 ea
Line Total: USD 32.24 
Availability - 970
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 62  Multiples: 50
Pack Size: 50
Availability Price Quantity
970
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 62
Multiples : 50
62 : USD 0.52
250 : USD 0.52
1000 : USD 0.52
2500 : USD 0.52
6250 : USD 0.52

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STP16N50M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP16N50M2 and other electronic components in the MOSFETs category and beyond.

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STD16N50M2, STF16N50M2, STP16N50M2 Datasheet N-channel 500 V, 0.24 typ., 13 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB 3 2 V at T 1 DS J R max. I Order code Packages DS(on) D DPAK max. TAB STD16N50M2 DPAK STF16N50M2 550 V 0.28 13 A TO-220FP 3 3 2 2 1 STP16N50M2 TO-220 1 TO-220 TO-220FP Extremely low gate charge D(2, TAB) Excellent output capacitance (C ) profile OSS 100% avalanche tested Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD16N50M2 STF16N50M2 STP16N50M2 DS10450 - Rev 6 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD16N50M2, STF16N50M2, STP16N50M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220 TO-220FP V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 13 A D C I Drain current (continuous) at T = 100 C 8 A D C (1) I Drain current (pulsed) 52 A DM P Total power dissipation at T = 25 C 110 25 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt Insulation withstand voltage (RMS) from all V three leads to external heat sink (t = 1 s, 2500 V ISO T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 13 A, di/dt 400 A/s, V < V , V = 80% V SD DS peak (BR)DSS DD (BR)DSS 3. V 400 V DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-220FP R Thermal resistance junction-case 1.14 5 thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 215 mJ AS j D AR DD DS10450 - Rev 6 page 2/24

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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