X-On Electronics has gained recognition as a prominent supplier of STP160N75F3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP160N75F3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP160N75F3 STMicroelectronics

Name: STP160N75F3
Brand: STMicroelectronics
SKU: STP160N75F3_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STP160N75F3 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STP160N75F3
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET 75V 3.5mOhm 120A N-Channel
Datasheet:	STP160N75F3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.8668 ea
Line Total: USD 6.87

Availability - 966
Ship by Tue. 14 Jan to Fri. 17 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

STP160N75F3 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

966

Ship by Tue. 14 Jan to Fri. 17 Jan

MOQ : 1
Multiples : 1

1 : USD 6.8668
10 : USD 6.0241
30 : USD 5.5091
100 : USD 5.0802

23

Ship by Tue. 07 Jan to Mon. 13 Jan

MOQ : 24
Multiples : 24

24 : USD 5.9318

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

120 A 120 A

Vds - Drain-Source Breakdown Voltage

75 V 75 V

Rds On - Drain-Source Resistance

4 mOhms 4 mOhms

Transistor Polarity

N - Channel N - Channel

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

330 W 330 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 220 TO - 220

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Channel Mode

Enhancement Enhancement

Tradename

Stripfet Stripfet

Configuration

Single Single

Series

Stp160n75f3 Stp160n75f3

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

120 A 120 A

Drain-Source Breakdown Voltage

75 V 75 V

Gate-Source Breakdown Voltage

+/- 20 V +/- 20 V

Power Dissipation

330 W 330 W

Rds On

4 Mohms 4 Mohms

Fall Time

15 ns 15 ns

Rise Time

65 ns 65 ns

Factory Pack Quantity :

50 50

Typical Turn-Off Delay Time

100 ns 100 ns

Height

9.15 mm 9.15 mm

Length

10.4 mm 10.4 mm

Transistor Type

1 N - Channel 1 N - Channel

Width

4.6 mm 4.6 mm

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-On Delay Time

22 ns 22 ns

Notes:- Show Stocked Products With Similar Attributes.

STP160N75F3 Alternative Parts

We are delighted to provide the STP160N75F3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP160N75F3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STB160N75F3 STP160N75F3 - STW160N75F3 2 N-channel 75V - 3.5m - 120A - TO-220 - TO-247 - D PAK STripFET Power MOSFET Features R DS(on) Type V I DSS D (max.) (1) STB160N75F3 75V 3.7 m 3 120 A 3 2 2 1 1 (1) TO-220 STP160N75F3 75V 4 m 120 A TO-247 (1) STW160N75F3 75V 4 m 120 A 1. Current limited by package 3 1 Ultra low on-resistance DPAK 100% Avalanche tested Application Figure 1. Internal schematic diagram Switching applications Description This N-channel enhancement mode Power MOSFET is the latest refinement of STs STripFET process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order codes Marking Package Packaging STB160N75F3 160N75F3 DPAK Tape & reel STP160N75F3 160N75F3 TO-220 Tube STW160N75F3 160N75F3 TO-247 Tube October 2007 Rev 2 1/16 www.st.com 16Contents STB160N75F3 - STP160N75F3 - STW160N75F3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 15 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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Availability	Price	Buy Price	Quantity
966 Ship by Tue. 14 Jan to Fri. 17 Jan MOQ : 1 Multiples : 1	1 : USD 6.8668 10 : USD 6.0241 30 : USD 5.5091 100 : USD 5.0802

23 Ship by Tue. 07 Jan to Mon. 13 Jan MOQ : 24 Multiples : 24	24 : USD 5.9318

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