STP15NM60ND STMicroelectronics

STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND N-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFET 2 2 D PAK, I PAK, TO-220, TO-220FP, TO-247 Features Type V ( Tjmax)R max I DSS DS(on) D 3 3 STB15NM60ND 14 A 2 1 1 STF15NM60ND 14 A 2 D PAK IPAK (1) STI15NM60ND 650 V 0.299 14 A 3 2 1 STP15NM60ND 14 A STW15NM60ND 14 A TO-247 1. Limited only by maximum temperature allowed 3 3 2 2 The worldwide best R * area amongst the 1 1 DS(on) fast recovery diode devices TO-220FP TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche Figure 1. Internal schematic diagram capabilities Application Switching applications Description The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company s strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging 2 STB15NM60ND 15NM60ND D PAK Tape and reel STF15NM60ND 15NM60ND TO-220FP Tube 2 STI15NM60ND 15NM60ND I PAK Tube STP15NM60ND 15NM60ND TO-220 Tube STW15NM60ND 15NM60ND TO-247 Tube April 2008 Rev 2 1/19 www.st.com 19Contents STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 3 Test circuit 7 4 Package mechanical data . 8 5 Packaging mechanical data 14 6 Revision history . 15 2/19