STP10NM50N STMicroelectronics

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 , 7 A DPAK, TO-220FP, TO-220 MDmesh II Power MOSFET Features TAB V R DSS DS(on) Type I D ( Tjmax) max 3 1 3 STD10NM50N 2 1 DPAK STF10NM50N 550 V < 0.63 7 A TO-220FP TAB STP10NM50N 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance TO-220 Applications Switching applications Figure 1. Internal schematic diagram Description 4 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order codes Marking Packages Packaging STD10NM50N DPAK Tape and reel STF10NM50N 10NM50N TO-220FP Tube STP10NM50N TO-220 October 2011 Doc ID 16929 Rev 3 1/18 www.st.com 18Contents STD10NM50N, STF10NM50N, STP10NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 17 2/18 Doc ID 16929 Rev 3