STP110N8F7 STMicroelectronics

STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STP110N8F7 110N8F7 TO-220 Tube November 2015 DocID027154 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STP110N8F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO-220 package mechanical data .................................................. 10 5 Revision history ............................................................................ 12 2/13 DocID027154 Rev 2