X-On Electronics has gained recognition as a prominent supplier of STP110N10F7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP110N10F7 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP110N10F7 STMicroelectronics

Name: STP110N10F7
Brand: STMicroelectronics
SKU: STP110N10F7_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STP110N10F7 electronic component of STMicroelectronics

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See Product Specifications

Part No.	STP110N10F7
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	STMicroelectronics MOSFET N-Ch 100V 6mOhm 110A STripFET VII
Datasheet:	STP110N10F7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 1.2723 ea
Line Total: USD 1272.3

Availability - 13580
Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ: 1000 Multiples: 1000
Pack Size: 1000

STP110N10F7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

13580

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 1000
Multiples : 1000

1000 : USD 1.2723
5000 : USD 1.2324

970

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 1000
Multiples : 1000

1000 : USD 2.513

13580

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 1000
Multiples : 1000

1000 : USD 1.2723
5000 : USD 1.2324

704

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 31
Multiples : 1

31 : USD 3.1741
50 : USD 3.0532
100 : USD 2.9496
250 : USD 2.75
500 : USD 2.6753

970

Ship by Fri. 21 Mar to Thu. 27 Mar

MOQ : 45
Multiples : 1

45 : USD 1.456
100 : USD 1.417

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

110 A 110 A

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

7 mOhms 7 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs - Gate-Source Breakdown Voltage

20 V 20 V

Vgs th - Gate-Source Threshold Voltage

2 v to 4 V 2 v to 4 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

150 W 150 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 220 - 3 TO - 220 - 3

Packaging

Tube Tube

Technology

Si Si

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

60 nC 60 nC

Tradename

Stripfet Stripfet

Series

Stp110n10f7 Stp110n10f7

Brand

Stmicroelectronics Stmicroelectronics

Factory Pack Quantity :

50 50

Product

Power Mosfet Power Mosfet

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Notes:- Show Stocked Products With Similar Attributes.

STP110N10F7 Alternative Parts

We are delighted to provide the STP110N10F7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP110N10F7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes V R max I P DS DS(on) D TOT STF110N10F7 45 A 30 W TAB 100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance 3 3 2 2 1 1 100% avalanche tested TO-220FP TO-220 Applications Switching applications Figure 1. Internal schematic diagram Description th These devices utilize the 7 generation of design rules of STs proprietary STripFET technology, % 7 with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. * 6 0 Y Table 1. Device summary Order codes Marking Package Packaging STF110N10F7 TO-220FP 110N10F7 Tube STP110N10F7 TO-220 July 2013 DocID024058 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STF110N10F7, STP110N10F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 15 2/16 DocID024058 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
13580 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 1000 Multiples : 1000	1000 : USD 1.2723 5000 : USD 1.2324

970 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 1000 Multiples : 1000	1000 : USD 2.513

13580 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 1000 Multiples : 1000	1000 : USD 1.2723 5000 : USD 1.2324

704 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 31 Multiples : 1	31 : USD 3.1741 50 : USD 3.0532 100 : USD 2.9496 250 : USD 2.75 500 : USD 2.6753

970 Ship by Fri. 21 Mar to Thu. 27 Mar MOQ : 45 Multiples : 1	45 : USD 1.456 100 : USD 1.417

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