STP10NK70ZFP STMicroelectronics

STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package V R I Type Pw DSS DS(on) D STP10NK70Z 700 V <0.85 8.6 A 110 W STP10NK70ZFP 700 V <0.85 8.6 A 35 W EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 2 IMPROVED ESD CAPABILITY 1 1 TO-220 100% AVALANCHE TESTED TO-220FP GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEABILITY Internal schematic diagram Description The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Applications HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR AND PFC Order codes Sales Type Marking Package Packaging STP10NK70Z P10NK70Z TO-220 TUBE STP10NK70ZFP P10NK70ZFP TO-220FP TUBE Rev 2 August 2005 1/13 www.st.com 131 Electrical ratings STP10NK70Z - STP10NK70ZFP 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-220FP V Drain-Source Voltage (V = 0) 700 V DS GS V Drain-gate Voltage (R = 20k ) 700 V DGR GS V Gate-Source Voltage 30 V GS I Drain Current (continuous) at T = 25C 8.6 8.6 (Note 3) A D C I Drain Current (continuous) at T = 100C 5.4 5.4 (Note 3) A D C I Note 2 Drain Current (pulsed) 34 34 (Note 3) A DM P Total Dissipation at T = 25C 150 35 W TOT C Derating Factor 1.20 0.28 W/C Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k) 4000 V dv/dt Peak Diode Recovery voltage slope 4.5 V/ns Note 1 V Insulation Withstand Volatge (DC) -- 2500 V ISO T j Operating Junction Temperature -55 to 150 C T Storage Temperature stg Table 2. Thermal data TO-220 TO-220FP Unit Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 C/W Rthj-amb Thermal Resistance Junction-amb Max 62.5 C/W Maximum Lead Temperature For Soldering T 300 C l Purpose Table 3. Avalanche characteristics Symbol Parameter Max Value Unit Avalanche Current, repetitive or I 8.6 A AR Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy E 350 mJ AS (starting Tj=25C, I =I , V = 50V) D AR DD 2/13