STP10NK80ZFP STMicroelectronics

STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet production data Features TAB Type V R I Pw DSS DS(on) D STP10NK80Z 800V <0.90 9A 160 W 3 2 3 1 2 STP10NK80ZFP 800V <0.90 9A 40 W 1 TO-220 TO-220FP STW10NK80Z 800V <0.90 9A 160 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances TO-247 Very good manufacturing repeability Applications Figure 1. Internal schematic diagram Switching application D(2,TAB) Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH technology, G(1) achieved through optimization of ST s well established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. S(3) AM01476v1 Table 1. Device summary Part number Marking Package Packaging STP10NK80Z P10NK80Z TO-220 Tube STP10NK80ZFP P10NK80ZFP TO-220FP Tube STW10NK80Z W10NK80Z TO-247 Tube March 2012 Doc ID 8911 Rev 7 1/17 This is information on a product in full production. www.st.com 17Contents STP10NK80Z, STP10NK80ZFP, STW10NK80Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Revision history . 16 2/17 Doc ID 8911 Rev 7