X-On Electronics has gained recognition as a prominent supplier of STP10NM60ND MOSFETs across the USA, India, Europe, Australia, and various other global locations. STP10NM60ND MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STP10NM60ND STMicroelectronics

STP10NM60ND electronic component of STMicroelectronics
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Part No.STP10NM60ND
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
Datasheet: STP10NM60ND Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.1288 ea
Line Total: USD 5.13 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 5.1288
10 : USD 1.8485
25 : USD 1.7417
100 : USD 1.4852
500 : USD 1.2181
1000 : USD 1.0119

   
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RoHS - XON
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Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the STP10NM60ND from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STP10NM60ND and other electronic components in the MOSFETs category and beyond.

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STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V R DS DS(on) Order code ID PTOT T max. jmax. STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance Low on-resistance R DS(on) Figure 1: Internal schematic diagram 100% avalanche tested High dv/dt ruggedness D(2, TAB) Applications Switching applications Description G(1) These FDmesh II Power MOSFETs with fast- recovery body diode are produced using MDmesh II technology. Utilizing a new strip- layout vertical structure, these devices feature S(3) low on-resistance and superior switching performance. They are ideal for bridge topologies AM01475v1 noZen and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STD10NM60ND DPAK Tape and reel STF10NM60ND 10NM60ND TO-220FP Tube STP10NM60ND TO-220 November 2017 DocID18467 Rev 3 1/21 www.st.com This is information on a product in full production. Contents STD10NM60ND, STF10NM60ND, STP10NM60ND Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 DPAK (TO-252) type A package information................................... 10 4.2 DPAK (TO-252) type E package information................................... 12 4.3 TO-220FP package information ...................................................... 14 4.4 TO-220 package information ........................................................... 16 4.5 DPAK (TO-252) packing information ............................................... 18 5 Revision history ............................................................................ 20 2/21 DocID18467 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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