STP11NM80 STMicroelectronics

STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFET in DPAK, TO-220FP, IPAK, TO-220, TO-247 Features R DS(on) Order codes V R *Q I DSS DS(on) g D max 3 3 1 2 STB11NM80 1 DPAK TO-220FP STF11NM80 STI11NM80 800 V < 0.40 14*nC 11 A STP11NM80 STW11NM80 3 3 3 2 2 2 Low input capacitance and gate charge 1 1 1 TO-247 IPAK TO-220 Low gate input resistance Best R *Qg in the industry DS(on) Applications Figure 1. Internal schematic diagram Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh technology, which associates the multiple drain process with the company s PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche 3 characteristics. Utilizing ST s proprietary strip technique, these Power MOSFETs boast an - V overall dynamic performance which is superior to similar products on the market. Table 1. Device summary Order codes Marking Package Packaging STB11NM80 B11NM80 DPAK Tape and reel STF11NM80 F11NM80 TO-220FP STI11NM80 I11NM80 IPAK Tube STP11NM80 P11NM80 TO-220 STW11NM80 W11NM80 TO-247 September 2011 Doc ID 9241 Rev 11 1/22 www.st.com 22Contents STB/F/I/P/W11NM80 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 19 6 Revision history . 21 2/22 Doc ID 9241 Rev 11