STP11NM60ND STMicroelectronics

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFET 2 I PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes V ( T )R max I DSS jmax DS(on) D 3 3 STD11NM60ND 10 A 1 2 1 (1) STF11NM60ND 10 A DPAK IPAK STI11NM60ND 650 V < 0.45 10 A 3 2 STP11NM60ND 10 A 1 STU11NM60ND 10 A IPAK 1. Limited only by maximum temperature allowed 3 3 2 2 The worldwide best R * area amongst the 1 1 DS(on) fast recovery diode devices TO-220FP TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. Internal schematic diagram Application Switching applications Description The device is an N-channel FDmesh II Power MOSFET that belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company s strip layout and associates all advantages of reduced on- 3 resistance and fast switching with an intrinsic fast- recovery body diode.It is therefore strongly - V recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STD11NM60ND DPAK Tape and reel STF11NM60ND TO-220FP Tube 2 STI11NM60ND 11NM60ND I PAK Tube STP11NM60ND TO-220 Tube STU11NM60ND IPAK Tube October 2010 Doc ID 14625 Rev 2 1/19 www.st.com 19Contents STD/F/I/P/U11NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuits . 10 4 Package mechanical data 11 5 Packaging mechanical data 17 6 Revision history . 18 2/19 Doc ID 14625 Rev 2