STP13N60M2 STMicroelectronics

STP13N60M2, STU13N60M2, STW13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Q g Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet production data Features TAB TAB Order codes V T R max I DS Jmax DS(on) D 3 2 1 STP13N60M2 3 2 1 IPAK STU13N60M2 650 V 0.38 11 A TO-220 STW13N60M2 Extremely low gate charge Lower R x area vs previous generation DS(on) 3 2 Low gate input resistance 1 100% avalanche tested TO-247 Zener-protected Figure 1. Internal schematic diagram Applications , TAB Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Q . These g revolutionary Power MOSFETs associate a vertical structure to the company s strip layout to yield one of the world s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STP13N60M2 TO-220 STU13N60M2 13N60M2 IPAK Tube STW13N60M2 TO-247 February 2014 DocID023937 Rev 5 1/18 This is information on a product in full production. www.st.com 18Contents STP13N60M2, STU13N60M2, STW13N60M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 17 2/18 DocID023937 Rev 5