STP140N8F7 STMicroelectronics

STP140N8F7 N-channel 80 V, 3.5 m typ., 90 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP140N8F7 80 V 4.3 m 90 A 200 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes D(2, TAB) STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(1) Table 1: Device summary Order code Marking Package Packaging STP140N8F7 140N8F7 TO-220 Tube S(3) AM01475v1 Tab October 2014 DocID026822 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STP140N8F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID026822 Rev 2