STP200NF04 STB200NF04 - STB200NF04-1 N-CHANNEL 40V - 120 A - 3.3 m TO-220/DPAK/IPAK STripFETII MOSFET Table 1: General Features Figure 1: Package Type V R I Pw DSS DS(on) D STB200NF04 40 V < 0.0037 120 A 310 W STB200NF04-1 40 V < 0.0037 120 A 310 W STP200NF04 40 V < 0.0037 120 A 310 W 3 STANDARD THRESHOLD DRIVE 1 3 100% AVALANCHE TESTED 2 2 1 D PAK DESCRIPTION TO-220 This MOSFET is the latest development of STMi- croelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on- 3 2 resistance, rugged avalance characteristics and 1 less critical alignment steps therefore a remark- 2 I PAK able manufacturing reproducibility. Figure 2: Internal Schematic Diagram APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED AUTOMOTIVE Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING 2 STB200NF04T4 B200NF04 TAPE & REEL D PAK 2 STB200NF04-1 B200NF04 TUBE I PAK STP200NF04 P200NF04 TO-220 TUBE Rev. 3 October 2004 1/15STP200NF04 - STB200NF04 - STB200NF04-1 Table 3: Absolute Maximum ratings Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 40 V DS GS V Drain-gate Voltage (R = 20 k ) 40 V DGR GS V Gate- source Voltage 20 V GS I ( ) Drain Current (continuos) at T = 25C 120 A D C I ( ) Drain Current (continuos) at T = 100C 120 A D C I ( ) Drain Current (pulsed) 480 A DM P Total Dissipation at T = 25C 310 W TOT C Derating Factor 2.07 W/C dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns E (2) Single Pulse Avalanche Energy 1.3 J AS T Operating Junction Temperature j -55 to 175 C T Storage Temperature stg ( ) Pulse width limited by safe operating area (1) I 120A, di/dt 500A/s, V V , T T SD DD (BR)DSS j JMAX. (2) Starting T = 25C, I = 60A, V =30 V j d DD ( ) Current Limited by Package Table 4: Thermal Data 2 2 TO-220 / I PAK / D PAK Rthj-case Thermal Resistance Junction-case Max 0.48 C/W Rthj-pcb Thermal Resistance Junction-pcb Max (see Figure 17) C/W Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l ELECTRICAL CHARACTERISTICS (T =25C UNLESS OTHERWISE SPECIFIED) CASE Table 5: On/Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 40 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating 1 A DSS DS Drain Current (V = 0) V = Max Rating, T = 125 C 10 A GS DS C I Gate-body Leakage V = 20V 100 nA GSS GS Current (V = 0) DS V Gate Threshold Voltage V = V , I = 250A 24V GS(th) DS GS D R Static Drain-source On V = 10V, I = 90 A 3.3 3.7 m DS(on) GS D Resistance 2/15