Product Information

STP20N60M2-EP

STP20N60M2-EP electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1501 ea
Line Total: USD 2.15

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

STP20N60M2-EP
STMicroelectronics

1 : USD 2.1501
10 : USD 1.7809
30 : USD 1.5121
100 : USD 1.2886
500 : USD 1.2509
1000 : USD 1.2334

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The STP20N60M2-EP with MOSFET PTD HIGH VOLTAGE is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) made by STMicroelectronics. This high-voltage MOSFET offers low on-resistance and higher safe operating area (SOA) due to its coplanar, floating gate structure. It is optimized to reduce losses and increase efficiency while operating at high voltages and temperatures up to 175°C. The STP20N60M2-EP is suitable for a variety of power applications, such as inverters, DC-DC converters, and motor drives. It also offers high-pulse powers with adequate efficiency for use in plasma displays, battery charger converters, and welding supplies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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