STP7N90K5 STMicroelectronics

STP7N90K5 Datasheet N-channel 900 V, 0.72 typ., 7 A MDmesh K5 Power MOSFET in a TO-220 package Features Order code V R max. I DS DS(on ) D TAB STP7N90K5 900 V 0.81 7 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 3 100% avalanche tested 2 1 Zener-protected TO-220 Applications Switching applications D(2, TAB) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a G(1) dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) AM01475V1 Product status STP7N90K5 Device summary Order code STP7N90K5 Marking 7N90K5 Package TO-220 Packing Tube DS11861 - Rev 2 - February 2018 www.st.com For further information contact your local STMicroelectronics sales office.STP7N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 7 A D C I Drain current (continuous) at T = 100 C 4.4 A D C (1) I Drain current (pulsed) 28 A D P Total dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Operating junction temperature range j - 55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 7 A, di/dt 100 A/s V peak < V V = 450 V SD DS (BR)DSS, DD 3. V 720 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.14 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 2.4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 230 mJ AS j D AR DD DS11861 - Rev 2 page 2/13