CPH3355 Power MOSFET www.onsemi.com 30V, 156m , 2.5A, Single P-Channel Features Electrical Connection P-Channel On-resistance R (on)1=120m (typ) DS 4V drive 3 Halogen free compliance Specifications 1 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 30V DSS 2 Gate to Source Voltage V 20 V GSS A Drain Current (DC) I 2.5 D Drain Current (Pulse) I 10 A DP PW10s, duty cycle1% Packing Type:TL Marking Power Dissipation When mounted on ceramic substrate P 1.0 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C TL This product is designed to ESD immunity < 200V*, so please take care when handling. * Machine Model Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : December 2014 - Rev. 3 CPH3355/D WM LOTNo.CPH3355 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=1A 1.9 S FS DS D R(on)1 I =1A, V=10V 120 156m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.5A, V=4.5V 187 262m DS D GS R(on)3 I =0.5A, V=4V 213 299m DS D GS Input Capacitance Ciss 172 pF Output Capacitance Coss V =10V, f=1MHz 51 pF DS Reverse Transfer Capacitance Crss 36 pF Turn-ON Delay Time t (on) 4.5 ns d Rise Time t 4.2 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 20 ns d Fall Time t 10.6 ns f Total Gate Charge Qg 3.9 nC Gate to Source Charge Qgs V =15V, V =10V, I =2.5A 0.6 nC DS GS D Gate to Drain Miller Charge Qgd 0.8 nC Forward Diode Voltage V I =2.5A, V=0V 0.86 1.5 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =--15V IN DD 0V --10V I =--1A D V IN R =15 L D V OUT PW=10s D.C.1% G CPH3355 P.G 50 S www.onsemi.com 2