X-On Electronics has gained recognition as a prominent supplier of CPH3461-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPH3461-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPH3461-TL-H ON Semiconductor

CPH3461-TL-H electronic component of ON Semiconductor
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Part No.CPH3461-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NCH 350MA 250V 2.5V DRIVE
Datasheet: CPH3461-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.4317
10 : USD 0.3257
100 : USD 0.2051
1000 : USD 0.1532
3000 : USD 0.1303
24000 : USD 0.115
45000 : USD 0.1095
99000 : USD 0.1067
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH3461-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH3461-TL-H and other electronic components in the MOSFETs category and beyond.

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CPH3461 Power MOSFET www.onsemi.com 250V, 6.5 , 350mA, Single N-Channel Features On-Resistance R (on)1=5 (typ) ESD Diode - Protected Gate DS 2.5V Drive Low Ciss and High Speed Switching Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value Unit Drain to Source Voltage V 250 V DSS Gate to Source Voltage V 10 V GSS Drain to Gate Voltage V 250 V DGS Gate to Drain Voltage V 10 V GDS Drain Current (DC) I 350 mA D Drain Current (Pulse) I PW 10s, duty cycle1% 1.4A DP 2 Power Dissipation P When mounted on ceramic substrate (900mm 0.8mm) 1.0W D Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient R 125 C/W JA 2 When mounted on ceramic substrate (900mm 0.8mm) Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 250 V BR DSS D GS Zero-Gate Voltage Drain Current I V =250V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=170mA 1 S FS DS D R(on)1 I =170mA, V=4.5V 5 6.5 DS D GS Static Drain to Source On-State Resistance R(on)2 I =170mA, V=2.5V 5.1 7.2 DS D GS Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : February 2015 - Rev. 2 CPH3461/D CPH3461 Continued from preceding page. Value Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss 140 pF Output Capacitance Coss V =20V, f=1MHz 8 pF DS Reverse Transfer Capacitance Crss 3 pF Turn-ON Delay Time t (on) 7.5 ns d Rise Time t 7.3 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 23 ns d Fall Time t 43 ns f Total Gate Charge Qg 2.1 nC Gate to Source Charge Qgs V =125V, V =4.5V, I =350mA 0.3 nC DS GS D Gate to Drain Miller Charge Qgd 0.7 nC Forward Diode Voltage V I =350mA, V=0V 0.79 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Packing Type : TL Marking Electrical Connection Switching Time Test Circuit 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION Device Package Shipping Note CPH3461-TL-H CPH3,SC-59 3,000pcs. / Tape & Reel Pb-Free and Halogen Free SOT-23,TO-236 CPH3461-TL-W www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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