CPH3461 Power MOSFET www.onsemi.com 250V, 6.5 , 350mA, Single N-Channel Features On-Resistance R (on)1=5 (typ) ESD Diode - Protected Gate DS 2.5V Drive Low Ciss and High Speed Switching Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value Unit Drain to Source Voltage V 250 V DSS Gate to Source Voltage V 10 V GSS Drain to Gate Voltage V 250 V DGS Gate to Drain Voltage V 10 V GDS Drain Current (DC) I 350 mA D Drain Current (Pulse) I PW 10s, duty cycle1% 1.4A DP 2 Power Dissipation P When mounted on ceramic substrate (900mm 0.8mm) 1.0W D Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient R 125 C/W JA 2 When mounted on ceramic substrate (900mm 0.8mm) Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 250 V BR DSS D GS Zero-Gate Voltage Drain Current I V =250V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=170mA 1 S FS DS D R(on)1 I =170mA, V=4.5V 5 6.5 DS D GS Static Drain to Source On-State Resistance R(on)2 I =170mA, V=2.5V 5.1 7.2 DS D GS Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : February 2015 - Rev. 2 CPH3461/D CPH3461 Continued from preceding page. Value Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss 140 pF Output Capacitance Coss V =20V, f=1MHz 8 pF DS Reverse Transfer Capacitance Crss 3 pF Turn-ON Delay Time t (on) 7.5 ns d Rise Time t 7.3 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 23 ns d Fall Time t 43 ns f Total Gate Charge Qg 2.1 nC Gate to Source Charge Qgs V =125V, V =4.5V, I =350mA 0.3 nC DS GS D Gate to Drain Miller Charge Qgd 0.7 nC Forward Diode Voltage V I =350mA, V=0V 0.79 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Packing Type : TL Marking Electrical Connection Switching Time Test Circuit 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION Device Package Shipping Note CPH3461-TL-H CPH3,SC-59 3,000pcs. / Tape & Reel Pb-Free and Halogen Free SOT-23,TO-236 CPH3461-TL-W www.onsemi.com 2