CPH6443-TL-W ON Semiconductor

CPH6443 Power MOSFET 35V, 37m , 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max 4V drive 37m 10V ESD Diode-Protected Gate 35V 61m 4.5V 6A Pb-Free, Halogen Free and RoHS compliance 73m 4V Typical Applications ELECTRICAL CONNECTION DC/DC Converter N-Channel Current Balance Switch for Backlight 1,2,5,6 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter SymbolValue Unit 1:Drain 2:Drain Drain to Source Voltage V 35V DSS 3 3:Gate 4:Source Gate to Source Voltage V 20 V GSS 5:Drain Drain Current (DC) I 6A D 6:Drain Drain Current (Pulse) 4 I 24 A DP PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 1.6 W D 2 (1200mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage TL the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping THERMAL RESISTANCE RATINGS information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 78.1 C/W JA 2 (1200mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : September 2015 - Rev. 2 CPH6443/D ZV LOTNo.CPH6443 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 35 V BR DSS D GS Zero-Gate Voltage Drain Current I V =35V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=3A 2.9 S FS DS D R (on)1 I =3A, V=10V 28 37m DS D GS Static Drain to Source On-State 43 61 R (on)2 I =1.5A, V =4.5V m DS D GS Resistance R (on)3 I =1.5A, V =4V 52 73 m DS D GS Input Capacitance Ciss 470 pF Output Capacitance Coss 70 pF V =20V, f=1MHz DS Reverse Transfer Capacitance Crss 35 pF Turn-ON Delay Time t (on) 8 ns d Rise Time t 17 ns r See specified Test Circuit Turn-OFF Delay Time 32 ns t (off) d Fall Time 22 ns t f Total Gate Charge Qg 10 nC Gate to Source Charge Qgs 2 nC V =20V, V =10V, I =6A DS GS D Gate to Drain Miller Charge Qgd 2 nC Forward Diode Voltage V SD I =6A, V=0V 0.84 1.2V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =20V IN DD 10V 0V I =3A D V IN R =6.7 L D V OUT PW=10s D.C.1% G CPH6443 P.G 50 S www.onsemi.com 2