Ordering number : EN6592A CPH6501 Bipolar Transistor CPH6501 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =30V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 0.1 A EBO EB C DC Current Gain h V =2V, I =100mA 200 560 FE CE C Gain-Bandwidth Product f V =10V, I =300mA 500 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =750mA, I =15mA 150 225 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =750mA, I =15mA 0.85 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 40 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 5 V (BR)EBO E C Turn-On Time t 35 ns on Storage Time t See speci ed Test Circuit. 205 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=20 s D.C.1% I OUTPUT B2 INPUT R B V R L R 16 50 + + 100 F 470 F V = --5V V =12V BE CC 20I = --20I =I =750mA B1 B2 C Ordering Information Device Package Shipping memo CPH6501-TL-E CPH6 3,000pcs./reel Pb Free No.6592-2/7