Ordering number : ENA1243C CPH6444 N-Channel Power MOSFET CPH6444 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =2A 1.8 3 S DS D R (on)1 I =2A, V =10V 60 78 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =1A, V =4.5V 74 104 m DS D GS R (on)3 I =1A, V =4V 81 114 m DS D GS Input Capacitance Ciss 505 pF Output Capacitance Coss V =20V, f=1MHz 57 pF DS Reverse Transfer Capacitance Crss 37 pF Turn-ON Delay Time t (on) 7.3 ns d Rise Time t 9.8 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 40 ns d Fall Time t 24 ns f Total Gate Charge Qg 10 nC Gate to Source Charge Qgs V =30V, V =10V, I =4.5A 1.6 nC DS GS D Gate to Drain Miller Charge Qgd 2.1 nC Diode Forward Voltage V I =4.5A, V =0V 0.83 1.2 V SD S GS Switching Time Test Circuit V V =30V DD IN 10V 0V I =2A D V IN R =15 L D V OUT PW=10 s D.C.1% G CPH6444 P.G 50 S No. A1243-2/6