X-On Electronics has gained recognition as a prominent supplier of R5005CNX MOSFETs across the USA, India, Europe, Australia, and various other global locations. R5005CNX MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

R5005CNX ROHM

R5005CNX electronic component of ROHM
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Part No.R5005CNX
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FM Bulk
Datasheet: R5005CNX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
34: USD 1.2204 ea
Line Total: USD 41.49 
Availability - 0
MOQ: 34  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 87
Multiples : 1
87 : USD 1.2385
100 : USD 1.183

   
Manufacturer
Product Category
Packaging
Channel Mode
Mounting
Operating Temp Range
Pin Count
Gate-Source Voltage Max
Drain-Source On-Volt
Package Type
Number Of Elements
Operating Temperature Classification
Power Dissipation
Rad Hardened
Polarity
Type
Continuous Drain Current
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We are delighted to provide the R5005CNX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the R5005CNX and other electronic components in the MOSFETs category and beyond.

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R5005CNX Datasheet Nch 500V 5A Power MOSFET llOutline TO-220FM V 500V DSS R (Max.) 1.6 DS(on) I 5A D P 40W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed GSS to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Packing Bulk Reel size (mm) - llApplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500 Taping code - Marking R5005CNX llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 500 V DSS *1 T = 25C I 5 A C D Continuous drain current *1 T = 100C I 2.3 A C D *2 I Pulsed drain current 20 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse E 1.6 mJ AS *4 E Avalanche energy, repetitive 1.3 mJ AR *3 Avalanche current I 2.5 A AR Power dissipation (T = 25C) P 40 W c D Junction temperature T 150 j Range of storage temperature T -55 to +150 stg Reverse diode dv/dt dv/dt 15 V/ns www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 1/13 20131105 - Rev.002 Not Recommended for New Designs R5005CNX Datasheet llAbsolute maximum ratings Parameter Symbol Conditions Values Unit V = 400V, I = 5A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125 j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 3.13 /W thJC Thermal resistance, junction - ambient R - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - S ource breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = , I = 2.5A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage T = 25C I - 0.1 100 A DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 30V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 2.5 - 4.5 V GS(th) DS D V = 10V, I = 2.5A GS D Static drain - source *6 R T = 25C - 1.3 1.6 j DS(on) on - state resistance T = 125C - 2.85 - j R Gate input resistance f = 1MHz, open drain - 7.4 - G www.rohm.com 2/13 2014 ROHM Co., Ltd. All rights reserved. 20131105 - Rev.002 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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