R5009ANX Datasheet Nch 500V 9A Power MOSFET llOutline V 500V DSS R (Max.) 0.72 DS(on) TO-220FM I 9A D P 51W D llInner circuit llFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V ) guaranteed to GSS be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant llPackaging specifications Packing Bulk Reel size (mm) - llApplication Tape width (mm) - Type Switching Basic ordering unit (pcs) 500 Taping code - Marking R5009ANX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 500 V DSS *1 T = 25C I 9 A C D Continuous drain current *1 T = 100C I 4.3 A C D *2 Pulsed drain current I 36 A DP V Gate - Source voltage 30 V GSS *3 Avalanche current, repetitive I 4.5 A AR *3 E Avalanche energy, single pulse 5.4 mJ AS *5 E Avalanche energy, repetitive 3.5 mJ AR *4 Power dissipation (T = 25C) P 51 W C D T Junction temperature 150 j Operating junction and storage temperature range T -55 +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/12 20160324 - Rev.001 Not Recommended for New Designs R5009ANX Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Values Unit Reverse diode dv/dt dv/dt - 15 V/ns Drain - Source voltage slope dv/dt V = 400V, T = 125 50 V/ns DS j llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 2.43 /W thJC R Thermal resistance, junction - ambient - - 70 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage V = 500V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 100 A DSS j drain current T = 125C - - 1000 j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 2.5 - 4.5 V GS(th) DS D V = 10V, I = 4.5A GS D Static drain - source *6 R T = 25C - 0.55 0.72 DS(on) j on - state resistance T = 125C - 1.17 - j R Gate resistance f =1MHz, open drain - 8.3 - G www.rohm.com 2/12 20160324 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs